{"title":"UWB 3.1–10.6 GHz CMOS LNA","authors":"F. Barale, D. Zito","doi":"10.1109/RME.2007.4401807","DOIUrl":null,"url":null,"abstract":"A novel ultra-wide-band low noise amplifier for 3.1-10.6 GHz operations is presented. The LNA consists of a common gate input stage and a subsequent common source gain stage. The common gate input stage allows the realization of a wideband input integrated matching to the source impedance of the antenna, whereas the common source stage provides a wideband gain by exploiting hybrid RLC tanks. By a properly RLC tank sizing, an ultra-wide-band pass frequency response is obtained. The LNA has been designed by using a standard CMOS 90 nm process by STMicroelectronics. The LNA provides a maximum transducer gain of 11.5 dB at 6.1 GHz, an input reflection coefficient lower than -14.2 dB over the whole frequency range, a mean noise figure equal to 5.5 dB, an input-referred 1-dB compression point of -16.3 dBm and an input-referred third order intercept point of -2.1 dBm.","PeriodicalId":118230,"journal":{"name":"2007 Ph.D Research in Microelectronics and Electronics Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Ph.D Research in Microelectronics and Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RME.2007.4401807","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

提出了一种用于3.1 ~ 10.6 GHz工作的新型超宽带低噪声放大器。LNA由一个公共门输入级和随后的公共源增益级组成。共门输入级允许实现宽带输入与天线源阻抗的集成匹配,而共源级通过利用混合RLC槽提供宽带增益。通过适当的RLC槽尺寸,可以获得超宽带通频响应。LNA采用意法半导体(STMicroelectronics)的标准CMOS 90纳米工艺设计。LNA在6.1 GHz时的最大换能器增益为11.5 dB,在整个频率范围内的输入反射系数低于-14.2 dB,平均噪声系数为5.5 dB,输入参考1 dB压缩点为-16.3 dBm,输入参考三阶截距点为-2.1 dBm。
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UWB 3.1–10.6 GHz CMOS LNA
A novel ultra-wide-band low noise amplifier for 3.1-10.6 GHz operations is presented. The LNA consists of a common gate input stage and a subsequent common source gain stage. The common gate input stage allows the realization of a wideband input integrated matching to the source impedance of the antenna, whereas the common source stage provides a wideband gain by exploiting hybrid RLC tanks. By a properly RLC tank sizing, an ultra-wide-band pass frequency response is obtained. The LNA has been designed by using a standard CMOS 90 nm process by STMicroelectronics. The LNA provides a maximum transducer gain of 11.5 dB at 6.1 GHz, an input reflection coefficient lower than -14.2 dB over the whole frequency range, a mean noise figure equal to 5.5 dB, an input-referred 1-dB compression point of -16.3 dBm and an input-referred third order intercept point of -2.1 dBm.
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