采用扩散图案通孔和细线印刷,密度更高

D. Bender, A. M. Ferreira
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引用次数: 5

摘要

讨论了采用最新厚材料和打印技术制造两个40毫米多芯片模块(MCM)- c的设计指南、工艺步骤和测试结果。两个LIC(线路接口控制器)模块设计有两个大型asic(加上内存),并使用厚膜金导体进行原型设计,线/空间为3 mil,通过标准为6 mil。LIC模块的第二个原型在5mil线和间隙处使用银导体,以进一步降低成本。第二个模块设计使用更多裸晶片(现场可编程门阵列和存储器)来实现更高的互连密度,但仍然使用现有的设计准则。据信,在生产中可以实现400万的过孔,并将为未来需要更高密度的设计而开发。与传统印刷过孔(10-20毫米)相比,扩散图案可以减少50%(4-6毫米)的过孔尺寸。
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Higher density using diffusion patterned vias and fine line printing
Design guidelines, process steps and test results from fabrication of two 40-mm multichip module (MCM)-Cs using the latest thick materials and printing techniques are discussed. Two two LIC (line interface controller) modules are designed with two large ASICs (plus memory) and prototyped using thick film gold conductors with 3 mil line/space and 6 mil via criteria. The second prototype of the LIC module utilizes silver conductors at 5 mil line and gap to further reduce cost. The second module design uses more bare die (field programmable gate arrays and memory) for a much higher interconnect density but still uses existing design guidelines. It is believed that 4 mil vias can be achieved in production and will be developed for future designs require higher density. Diffusion patterning allows a 50% reduction (4-6 mil) in via size versus traditional printed vias (10-20 mil).<>
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