双门控硅场发射阵列:制造与表征

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354971

L. Chen, A. Akinwande

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引用次数: 1

摘要

本文研究了双门场发射阵列(FEA)中栅极场因子和聚焦场因子对光束初始扩散的影响。光学测量证实，器件的尖端低于栅极孔径提供了一个小的光束传播。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Double-gated silicon field emission arrays: fabrication and characterization

In this work, the gate field factor and focus field factor were examined in the double-gated field emission array (FEA) and were shown to have strong influence on the initial beam spread. The optical measurement verified that the device with the tip below the gate aperture provides a small beam spread.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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