局部和直接电磁注入功率到CMOS集成电路

F. Poucheret, Karim Tobich, M. Lisart, L. Chusseau, B. Robisson, P. Maurine
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引用次数: 52

摘要

本文旨在通过实验证明微型天线尖端之间的微小电磁耦合足以在局部和直接向CMOS集成电路(IC)注入功率。更准确地说,实验结果表明,无论是否拆除IC封装,这种电耦合都足以干扰90nm CMOS环形振荡器的行为。环形振荡器是CMOS逻辑的代表结构,也是一些真随机数发生器(trng)或时钟发生器的组成元件。
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Local and Direct EM Injection of Power Into CMOS Integrated Circuits
The paper aims at demonstrating experimentally that the tiny Electro Magnetic (EM) coupling between the tip end of a micro-antenna is sufficient to locally and directly inject power into CMOS Integrated Circuits (IC). More precisely, experimental results show that such electrical couplings are sufficient to disturb, with and without removing the IC package, the behavior of 90nm CMOS Ring Oscillators, a representative structure of CMOS logic but also a constituting element of some True Random Number Generators (TRNGs) or clock generator.
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