{"title":"强电场对俄歇晶体管和基于场发射体的辐射探测器工作模式的影响","authors":"V. Kalganov, N. V. Mileshkina, E. V. Ostroumova","doi":"10.1109/ICCDCS.2002.1004031","DOIUrl":null,"url":null,"abstract":"The photo-field emission properties of semiconductors at a very strong electric field as well as the parallel investigation of tunnel electron emission in metal-insulator-semiconductor heterostructures with a tunnel-transparent layer of an insulator have been studied. It was found that the self-consistent quantum well near the surface of semiconductor emitter tips can change the spectral region of photosensitivity of the radiation detectors, based on a semiconductor field emitter, and leads to the significant increase in their photosensitivity. The investigation of the metal-insulator-semiconductor heterostructures allows to realize the emission of hot electrons from the metal to the semiconductor, and makes possible to create the Auger-transistor based on the Al-SiO/sub 2/-n-Si structure which is the fastest operation semiconductor bipolar transistor.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The influence of a strong electric field on the operating modes of the Auger transistor and the radiation detectors based on field emitters\",\"authors\":\"V. Kalganov, N. V. Mileshkina, E. V. Ostroumova\",\"doi\":\"10.1109/ICCDCS.2002.1004031\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The photo-field emission properties of semiconductors at a very strong electric field as well as the parallel investigation of tunnel electron emission in metal-insulator-semiconductor heterostructures with a tunnel-transparent layer of an insulator have been studied. It was found that the self-consistent quantum well near the surface of semiconductor emitter tips can change the spectral region of photosensitivity of the radiation detectors, based on a semiconductor field emitter, and leads to the significant increase in their photosensitivity. The investigation of the metal-insulator-semiconductor heterostructures allows to realize the emission of hot electrons from the metal to the semiconductor, and makes possible to create the Auger-transistor based on the Al-SiO/sub 2/-n-Si structure which is the fastest operation semiconductor bipolar transistor.\",\"PeriodicalId\":416680,\"journal\":{\"name\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2002.1004031\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004031","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The influence of a strong electric field on the operating modes of the Auger transistor and the radiation detectors based on field emitters
The photo-field emission properties of semiconductors at a very strong electric field as well as the parallel investigation of tunnel electron emission in metal-insulator-semiconductor heterostructures with a tunnel-transparent layer of an insulator have been studied. It was found that the self-consistent quantum well near the surface of semiconductor emitter tips can change the spectral region of photosensitivity of the radiation detectors, based on a semiconductor field emitter, and leads to the significant increase in their photosensitivity. The investigation of the metal-insulator-semiconductor heterostructures allows to realize the emission of hot electrons from the metal to the semiconductor, and makes possible to create the Auger-transistor based on the Al-SiO/sub 2/-n-Si structure which is the fastest operation semiconductor bipolar transistor.
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