BCD8sP:一个先进的0.16 μm技术平台，具有最先进的功率器件

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694422

R. Roggero, G. Croce, P. Gattari, E. Castellana, A. Molfese, G. Marchesi, L. Atzeni, C. Buran, A. Paleari, G. Ballarin, S. Manzini, F. Alagi, G. Pizzo

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引用次数: 33

摘要

开发了先进的0.16 μm BCD技术平台，提供密集逻辑晶体管(1.8 V-5 V CMOS)和高性能模拟功能。得益于专门的现场极板优化、阀体和漏极工程，获得了最先进的功率器件(额定8 V至42 V)，确保了具有最佳RONXAREA-BVDSS权衡的大安全操作区域。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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BCD8sP: An advanced 0.16 μm technology platform with state of the art power devices

Advanced 0.16 μm BCD technology platform offering dense logic transistors (1.8 V-5 V CMOS) and high performance analog features has been developed. Thanks to dedicated field plate optimization, body and drain engineering, state of the art power devices (8 V to 42 V rated) have been obtained ensuring large Safe Operating Areas with best RONXAREA-BVDSS tradeoff.

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2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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