{"title":"热化学气相沉积法制备氮化非晶碳膜","authors":"F. Mohamad, M. Rusop","doi":"10.1109/RSM.2013.6706517","DOIUrl":null,"url":null,"abstract":"The comparison in term of both electrical and structural properties of amorphous carbon (a-C) thin film and nitrogenated amorphous carbon (a-C:N) thin film deposited at 750 °C has been done. The deposition of those films by thermal chemical vapour deposition (TCVD) technique involved argon (Ar) gas, nitrogen gas (N2) and camphor oil as carrier gas, dopant and carbon source respectively. The electrical and structural characterizations were based on Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software and Scanning Electron Microscopy (SEM). There are significant changes in electrical properties and surface morphology for a-C and a-C:N thin films due to the arrangement of nitrogen atoms.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nitrogenated amorphous carbon film by thermal chemical vapor deposition\",\"authors\":\"F. Mohamad, M. Rusop\",\"doi\":\"10.1109/RSM.2013.6706517\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The comparison in term of both electrical and structural properties of amorphous carbon (a-C) thin film and nitrogenated amorphous carbon (a-C:N) thin film deposited at 750 °C has been done. The deposition of those films by thermal chemical vapour deposition (TCVD) technique involved argon (Ar) gas, nitrogen gas (N2) and camphor oil as carrier gas, dopant and carbon source respectively. The electrical and structural characterizations were based on Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software and Scanning Electron Microscopy (SEM). There are significant changes in electrical properties and surface morphology for a-C and a-C:N thin films due to the arrangement of nitrogen atoms.\",\"PeriodicalId\":346255,\"journal\":{\"name\":\"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RSM.2013.6706517\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2013.6706517","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nitrogenated amorphous carbon film by thermal chemical vapor deposition
The comparison in term of both electrical and structural properties of amorphous carbon (a-C) thin film and nitrogenated amorphous carbon (a-C:N) thin film deposited at 750 °C has been done. The deposition of those films by thermal chemical vapour deposition (TCVD) technique involved argon (Ar) gas, nitrogen gas (N2) and camphor oil as carrier gas, dopant and carbon source respectively. The electrical and structural characterizations were based on Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software and Scanning Electron Microscopy (SEM). There are significant changes in electrical properties and surface morphology for a-C and a-C:N thin films due to the arrangement of nitrogen atoms.
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