{"title":"P-i-N二极管的存储电荷控制:仿真方法","authors":"H. E. Aldrete-Vidrio, J. Santana, J. L. del Valle","doi":"10.1109/ICCDCS.2002.1004033","DOIUrl":null,"url":null,"abstract":"This paper compares the important electrical parameters such as forward voltage drop, breakdown voltage, reverse leakage current and the reverse recovery time under the same operation conditions for different power rectifier diode structures. Such structures include conventional, conventional with an anode mosaic contact and a modified mosaic contact P-i-N diode structures. Based on standard process parameter, the technological, electrical and mixed-mode simulation is carried out using the advanced two-dimensional (2-D) device, circuit and system simulator, ISE-TCAD and compared to analytical doping profiles simulations showing that such structures are feasible.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Stored charge control of P-i-N diodes: a simulation approach\",\"authors\":\"H. E. Aldrete-Vidrio, J. Santana, J. L. del Valle\",\"doi\":\"10.1109/ICCDCS.2002.1004033\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper compares the important electrical parameters such as forward voltage drop, breakdown voltage, reverse leakage current and the reverse recovery time under the same operation conditions for different power rectifier diode structures. Such structures include conventional, conventional with an anode mosaic contact and a modified mosaic contact P-i-N diode structures. Based on standard process parameter, the technological, electrical and mixed-mode simulation is carried out using the advanced two-dimensional (2-D) device, circuit and system simulator, ISE-TCAD and compared to analytical doping profiles simulations showing that such structures are feasible.\",\"PeriodicalId\":416680,\"journal\":{\"name\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"volume\":\"79 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2002.1004033\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Stored charge control of P-i-N diodes: a simulation approach
This paper compares the important electrical parameters such as forward voltage drop, breakdown voltage, reverse leakage current and the reverse recovery time under the same operation conditions for different power rectifier diode structures. Such structures include conventional, conventional with an anode mosaic contact and a modified mosaic contact P-i-N diode structures. Based on standard process parameter, the technological, electrical and mixed-mode simulation is carried out using the advanced two-dimensional (2-D) device, circuit and system simulator, ISE-TCAD and compared to analytical doping profiles simulations showing that such structures are feasible.
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