自对准碳纳米管场发射尖端的简单工艺

2006 First International Conference on Communications and Electronics Pub Date : 2006-10-01 DOI:10.1109/CCE.2006.350878

B. Eom, Changho Han, H. Kim, M. Yum, Ji-Hun Yang, C. Park, K. Chun

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引用次数: 1

摘要

碳纳米管(CNTs)是最具吸引力的场发射尖端材料之一。由于其阈值电压低，电流密度大。本文介绍了一种简单制备场致发射尖端自对准碳纳米管的新工艺。我们可以用我们的单掩模工艺制造直径小于200nm的孔，通过这种工艺，碳纳米管将与栅极层自对齐。然后碳纳米管将在PECVD室中催化生长。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Self-Aligned Carbon Nanotubes for Field Emission Tip with Simple Process

Carbon nanotubes (CNTs) is one of the most attractive materials for field emission tip. Because of its low threshold voltage and high current density. In this article we introduce a new simple process to fabricate self-aligned carbon nanotubes for field emission tip with simple process. We can make the less than 200nm diameter hole with our one mask like process by which carbon nanotubes will be self-aligned with the gate layer. And then carbon nanotubes will be catalytically grown in PECVD chamber.

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2006 First International Conference on Communications and Electronics

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