Yu Tian, Li Xu, Zhiwei Xue, Zhipeng Wei, Fei Yu, Zou Yonggang, Xiao-hui Ma, Wei Zhao, Qingxue Sui, Zhimin Zhang
{"title":"高亮度红色发光二极管用耦合分布式布喇格反射器","authors":"Yu Tian, Li Xu, Zhiwei Xue, Zhipeng Wei, Fei Yu, Zou Yonggang, Xiao-hui Ma, Wei Zhao, Qingxue Sui, Zhimin Zhang","doi":"10.1109/ICOOM.2012.6316227","DOIUrl":null,"url":null,"abstract":"AlGaInP LEDs with Coupled distributed bragg reflectors were grown by Metal-organic Chemical Vapor Deposition (MOCVD). The results showed that the peak wavelength of this structure LED was 625nm, and normal luminous intensity was increased to 164mcd on injection current 20mA from the LED with coupled DBR structure.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Coupled distributed bragg reflector for high brightness red light-emitting diodes\",\"authors\":\"Yu Tian, Li Xu, Zhiwei Xue, Zhipeng Wei, Fei Yu, Zou Yonggang, Xiao-hui Ma, Wei Zhao, Qingxue Sui, Zhimin Zhang\",\"doi\":\"10.1109/ICOOM.2012.6316227\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlGaInP LEDs with Coupled distributed bragg reflectors were grown by Metal-organic Chemical Vapor Deposition (MOCVD). The results showed that the peak wavelength of this structure LED was 625nm, and normal luminous intensity was increased to 164mcd on injection current 20mA from the LED with coupled DBR structure.\",\"PeriodicalId\":129625,\"journal\":{\"name\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICOOM.2012.6316227\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Optoelectronics and Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICOOM.2012.6316227","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Coupled distributed bragg reflector for high brightness red light-emitting diodes
AlGaInP LEDs with Coupled distributed bragg reflectors were grown by Metal-organic Chemical Vapor Deposition (MOCVD). The results showed that the peak wavelength of this structure LED was 625nm, and normal luminous intensity was increased to 164mcd on injection current 20mA from the LED with coupled DBR structure.