低相位噪声w波段InP-HBT单片推推式压控振荡器

K. Kobayashi, J. Cowles, L. Tran, A. Gutierrez-Aitken, T. Block, F. Yamada, A. Oki, D. Streit
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引用次数: 9

摘要

本文报道了迄今为止报道的频率最高的双极VCO MMIC。w波段压控振荡器基于推推振荡器拓扑,该拓扑采用f/sub T/ s和f/sub max/ s分别为70 GHz和200 GHz的inp - hbt。w波段压控振荡器的最大振荡频率为108 GHz,输出功率为+0.92 dBm,输出功率为50 /spl ω /。该VCO还使用单片变容管获得2.73 GHz或2.6%的调谐范围。在1mhz和10mhz偏移量下,相位噪声分别为-88 dBc/Hz和-109 dBc/Hz,被认为是单片w波段压控振荡器的最低相位噪声。推推式压控振荡器设计方法可实现更高的压控振荡器频率,更低的噪声性能和更小的尺寸,这对于毫米波频率源应用具有吸引力。
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A low phase noise W-band InP-HBT monolithic push-push VCO
This paper reports on what is believed to be the highest frequency bipolar VCO MMIC so far reported. The W-band VCO is based on a push-push oscillator topology which employs InP-HBTs with f/sub T/'s and f/sub max/'s of 70 and 200 GHz, respectively. The W-band VCO produces a maximum oscillating frequency of 108 GHz and delivers an output power of +0.92 dBm into 50 /spl Omega/. The VCO also obtains a tuning range of 2.73 GHz or 2.6% using a monolithic varactor. A phase noise of -88 dBc/Hz and -109 dBc/Hz is achieved at 1 MHz and 10 MHz offsets, respectively, and is believed to be the lowest phase noise reported for a monolithic W-band VCO. The push-push VCO design approach enables higher VCO frequency operation, lower noise performance, and smaller size which is attractive for MM-wave frequency source applications.
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