用于MLS的5 ghz 20瓦GaAs FET放大器

1986 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1986-06-02 DOI:10.1109/MWSYM.1986.1132217

K. Hirai, H. Takamatsu, S. Morikawa, N. Tomita

{"title":"用于MLS的5 ghz 20瓦GaAs FET放大器","authors":"K. Hirai, H. Takamatsu, S. Morikawa, N. Tomita","doi":"10.1109/MWSYM.1986.1132217","DOIUrl":null,"url":null,"abstract":"5-GHz 20-watt GaAs FET amplifier using two state-of-the-art high power FETs in the final stage was developed for MLS applications. GaAs FET limiter with unique input/output characteristics and efficient operation of the final FETs were studied for this purpose. Stabilization of output power within 1dB peak-to-peak by means of open loop control was achieved of PIN diode attenuator.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"160 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"5-GHz 20-Watt GaAs FET Amplifier for MLS\",\"authors\":\"K. Hirai, H. Takamatsu, S. Morikawa, N. Tomita\",\"doi\":\"10.1109/MWSYM.1986.1132217\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"5-GHz 20-watt GaAs FET amplifier using two state-of-the-art high power FETs in the final stage was developed for MLS applications. GaAs FET limiter with unique input/output characteristics and efficient operation of the final FETs were studied for this purpose. Stabilization of output power within 1dB peak-to-peak by means of open loop control was achieved of PIN diode attenuator.\",\"PeriodicalId\":109161,\"journal\":{\"name\":\"1986 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"160 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1986.1132217\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1986.1132217","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在最后阶段使用两个最先进的高功率场效应管的5 ghz 20瓦GaAs场效应管放大器被开发用于MLS应用。为此，研究了具有独特输入/输出特性和高效运行的GaAs FET限幅器。通过对PIN二极管衰减器的开环控制，实现了输出功率在1dB以内的峰值稳定。

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5-GHz 20-Watt GaAs FET Amplifier for MLS

5-GHz 20-watt GaAs FET amplifier using two state-of-the-art high power FETs in the final stage was developed for MLS applications. GaAs FET limiter with unique input/output characteristics and efficient operation of the final FETs were studied for this purpose. Stabilization of output power within 1dB peak-to-peak by means of open loop control was achieved of PIN diode attenuator.

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1986 IEEE MTT-S International Microwave Symposium Digest

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