{"title":"小型化片上SIW腔滤波器和65nm CMOS双工器的设计","authors":"Amir Altaf, W. Abbas, M. Seo","doi":"10.1109/IMCOM51814.2021.9377381","DOIUrl":null,"url":null,"abstract":"A miniaturized on-chip substrate integrated waveguide (SIW) bandpass filter (BPF) and diplexer are designed in a 65nm CMOS process. The miniaturization of 42% is achieved by carving slots in the top layer of the SIW cavity. The designed two pole bandpass filter has a simulated 3 dB bandwidth of 11.1% around 70 GHz, while the diplexer has 3-dB bandwidths of 15.3% GHz and 14.86% around 71 and 90.9 GHz, respectively. Moreover, the isolation between two output ports of the diplexer is greater than -27.3 dB.","PeriodicalId":275121,"journal":{"name":"2021 15th International Conference on Ubiquitous Information Management and Communication (IMCOM)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of Miniaturized On-chip SIW Cavity Filter and Diplexer in 65nm CMOS Process\",\"authors\":\"Amir Altaf, W. Abbas, M. Seo\",\"doi\":\"10.1109/IMCOM51814.2021.9377381\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A miniaturized on-chip substrate integrated waveguide (SIW) bandpass filter (BPF) and diplexer are designed in a 65nm CMOS process. The miniaturization of 42% is achieved by carving slots in the top layer of the SIW cavity. The designed two pole bandpass filter has a simulated 3 dB bandwidth of 11.1% around 70 GHz, while the diplexer has 3-dB bandwidths of 15.3% GHz and 14.86% around 71 and 90.9 GHz, respectively. Moreover, the isolation between two output ports of the diplexer is greater than -27.3 dB.\",\"PeriodicalId\":275121,\"journal\":{\"name\":\"2021 15th International Conference on Ubiquitous Information Management and Communication (IMCOM)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-01-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 15th International Conference on Ubiquitous Information Management and Communication (IMCOM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMCOM51814.2021.9377381\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 15th International Conference on Ubiquitous Information Management and Communication (IMCOM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMCOM51814.2021.9377381","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of Miniaturized On-chip SIW Cavity Filter and Diplexer in 65nm CMOS Process
A miniaturized on-chip substrate integrated waveguide (SIW) bandpass filter (BPF) and diplexer are designed in a 65nm CMOS process. The miniaturization of 42% is achieved by carving slots in the top layer of the SIW cavity. The designed two pole bandpass filter has a simulated 3 dB bandwidth of 11.1% around 70 GHz, while the diplexer has 3-dB bandwidths of 15.3% GHz and 14.86% around 71 and 90.9 GHz, respectively. Moreover, the isolation between two output ports of the diplexer is greater than -27.3 dB.