平面场效应管与双栅finfet几何相关电容的比较研究:优化与工艺变化

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210129

C. Sohn, C. Kang, R. Baek, D. Choi, H. Sagong, E. Jeong, Jeong-Soo Lee, P. Kirsch, R. Jammy, J. Lee, Y. Jeong

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引用次数: 7

摘要

我们定量地比较了平面场效应管和DG finfet的寄生电容。采用固定的fin- hfin比进行优化可显著降低Cpara/W，从而使DG finfet与平面fet相当。应控制Wfin和Hfin的工艺变化，否则，DG fet的Cpara均匀性将比平面fet差。

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Comparative study of geometry-dependent capacitances of planar FETs and double-gate FinFETs: Optimization and process variation

We quantitatively compared the parasitic capacitance of the planar FETs and the DG FinFETs. Optimization with a fixed Sfin-to-H_fin ratio significantly reduces C_para/W, which renders DG FinFETs comparable to planar FETs. Process variation on W_fin and H_fin should be controlled, otherwise, the C_para uniformity will be worse for DG FinFETs than it is planar FETs.

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Proceedings of Technical Program of 2012 VLSI Technology, System and Application

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