{"title":"微波晶体管[mesfet]的噪声波建模","authors":"N. Males-Ilic, V. Markovic, O. Pronic","doi":"10.1109/MELCON.2000.880414","DOIUrl":null,"url":null,"abstract":"This paper presents a new procedure for noise modeling of microwave transistors based on the wave approach. The correlation matrix elements are calculated in terms of three equivalent noise temperatures. The strength of noise wave sources and correlation coefficient are shown graphically as a function of frequency and discussed. Also, the transistor noise parameters are determined from calculated noise wave sources by using microwave circuit simulator Libra.","PeriodicalId":151424,"journal":{"name":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","volume":"191 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Noise wave modeling of microwave transistors [MESFETs]\",\"authors\":\"N. Males-Ilic, V. Markovic, O. Pronic\",\"doi\":\"10.1109/MELCON.2000.880414\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a new procedure for noise modeling of microwave transistors based on the wave approach. The correlation matrix elements are calculated in terms of three equivalent noise temperatures. The strength of noise wave sources and correlation coefficient are shown graphically as a function of frequency and discussed. Also, the transistor noise parameters are determined from calculated noise wave sources by using microwave circuit simulator Libra.\",\"PeriodicalId\":151424,\"journal\":{\"name\":\"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)\",\"volume\":\"191 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MELCON.2000.880414\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MELCON.2000.880414","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Noise wave modeling of microwave transistors [MESFETs]
This paper presents a new procedure for noise modeling of microwave transistors based on the wave approach. The correlation matrix elements are calculated in terms of three equivalent noise temperatures. The strength of noise wave sources and correlation coefficient are shown graphically as a function of frequency and discussed. Also, the transistor noise parameters are determined from calculated noise wave sources by using microwave circuit simulator Libra.
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