{"title":"单片双向交换机(MBS)","authors":"F. Heinke, R. Sittig","doi":"10.1109/ISPSD.2000.856815","DOIUrl":null,"url":null,"abstract":"A new power semiconductor device is introduced which facilitates bidirectional operation. Numerical simulations predict excellent stationary characteristics up to high temperatures. Moreover under all operation conditions the device allows one to adjust the distribution of the electron hole plasma. For instance during turn-off it is possible to control the rate of current decay and the corresponding overvoltage peak.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"The monolithic bidirectional switch (MBS)\",\"authors\":\"F. Heinke, R. Sittig\",\"doi\":\"10.1109/ISPSD.2000.856815\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new power semiconductor device is introduced which facilitates bidirectional operation. Numerical simulations predict excellent stationary characteristics up to high temperatures. Moreover under all operation conditions the device allows one to adjust the distribution of the electron hole plasma. For instance during turn-off it is possible to control the rate of current decay and the corresponding overvoltage peak.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856815\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856815","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new power semiconductor device is introduced which facilitates bidirectional operation. Numerical simulations predict excellent stationary characteristics up to high temperatures. Moreover under all operation conditions the device allows one to adjust the distribution of the electron hole plasma. For instance during turn-off it is possible to control the rate of current decay and the corresponding overvoltage peak.
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