{"title":"功率循环体二极管在SiC MOSFET器件上的电流流动","authors":"Giovanni Corrente, N. Bentivegna, S. Russo","doi":"10.1109/IOLTS56730.2022.9897452","DOIUrl":null,"url":null,"abstract":"The aim of this paper is to analyze the planar SiC MOSFETs behavior under power cycle current flow on body diode. In particular, the activity highlights how this type of trials, in addition to stimulate failure mechanisms directly related to metal fatigue, is able to stimulate failure mechanisms that seem not directly related to metal fatigue. The activity was developed by supporting the analysis of data obtained through laboratory measurements from a careful study of Failure Analysis (FA).","PeriodicalId":274595,"journal":{"name":"2022 IEEE 28th International Symposium on On-Line Testing and Robust System Design (IOLTS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Power Cycling Body Diode Current Flow on SiC MOSFET Device\",\"authors\":\"Giovanni Corrente, N. Bentivegna, S. Russo\",\"doi\":\"10.1109/IOLTS56730.2022.9897452\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of this paper is to analyze the planar SiC MOSFETs behavior under power cycle current flow on body diode. In particular, the activity highlights how this type of trials, in addition to stimulate failure mechanisms directly related to metal fatigue, is able to stimulate failure mechanisms that seem not directly related to metal fatigue. The activity was developed by supporting the analysis of data obtained through laboratory measurements from a careful study of Failure Analysis (FA).\",\"PeriodicalId\":274595,\"journal\":{\"name\":\"2022 IEEE 28th International Symposium on On-Line Testing and Robust System Design (IOLTS)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE 28th International Symposium on On-Line Testing and Robust System Design (IOLTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IOLTS56730.2022.9897452\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 28th International Symposium on On-Line Testing and Robust System Design (IOLTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IOLTS56730.2022.9897452","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Power Cycling Body Diode Current Flow on SiC MOSFET Device
The aim of this paper is to analyze the planar SiC MOSFETs behavior under power cycle current flow on body diode. In particular, the activity highlights how this type of trials, in addition to stimulate failure mechanisms directly related to metal fatigue, is able to stimulate failure mechanisms that seem not directly related to metal fatigue. The activity was developed by supporting the analysis of data obtained through laboratory measurements from a careful study of Failure Analysis (FA).
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