{"title":"运算放大器的一些设计方面","authors":"B. Hoefflinger, K. Schumacher, H. Sibbert","doi":"10.1049/IJ-SSED:19790010","DOIUrl":null,"url":null,"abstract":"An m.o.s. operational amplifier suitable for large-scale integration using n-channel enhancementdepletion technology is reported. It has a large gain of 94 dB, a unity-gain bandwidth of 1 MHz with a small power dissipation of 2.4 mW and it occupies only 0.2 mm2. These miniaturised amplifiers require computeraided design, and the capabilities of the nonlinear d.o.m.o.s. model and computer program are demonstrated. Simple equations for exploratory design and comparison with designs using weak-inversion, complementary or bipolar transistors are also discussed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Some design aspects of m.o.s.l.s.i. operational amplifiers\",\"authors\":\"B. Hoefflinger, K. Schumacher, H. Sibbert\",\"doi\":\"10.1049/IJ-SSED:19790010\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An m.o.s. operational amplifier suitable for large-scale integration using n-channel enhancementdepletion technology is reported. It has a large gain of 94 dB, a unity-gain bandwidth of 1 MHz with a small power dissipation of 2.4 mW and it occupies only 0.2 mm2. These miniaturised amplifiers require computeraided design, and the capabilities of the nonlinear d.o.m.o.s. model and computer program are demonstrated. Simple equations for exploratory design and comparison with designs using weak-inversion, complementary or bipolar transistors are also discussed.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED:19790010\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19790010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Some design aspects of m.o.s.l.s.i. operational amplifiers
An m.o.s. operational amplifier suitable for large-scale integration using n-channel enhancementdepletion technology is reported. It has a large gain of 94 dB, a unity-gain bandwidth of 1 MHz with a small power dissipation of 2.4 mW and it occupies only 0.2 mm2. These miniaturised amplifiers require computeraided design, and the capabilities of the nonlinear d.o.m.o.s. model and computer program are demonstrated. Simple equations for exploratory design and comparison with designs using weak-inversion, complementary or bipolar transistors are also discussed.