一种77GHz CMOS压控振荡器,具有11.3GHz调谐范围,6dBm输出功率和65nm块体CMOS竞争相位噪声

V. Trivedi, K. To, W. Huang
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引用次数: 24

摘要

我们证明,使用基于代工厂的65nm体块技术,在38GHz和77GHz范围内的毫米波CMOS vco具有最高的连续调谐范围(14%-25%),竞争相位噪声(77GHz时1MHz偏移时- 88dBc/Hz)和高输出(77GHz时6dBm),需要容易地与CMOS PA集成并容忍PVT变化。在1V电源(VDD)下,77GHz VCO的直流功耗为~ 190mW, 38GHz VCO的直流功耗为~ 60mW(无缓冲)。提出了实现高性能的器件和设计优化。温度和VDD变化的影响(例如,频率漂移~ 2.6GHz和77GHz时Pout变化>5.3dB)首次被报道。
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A 77GHz CMOS VCO with 11.3GHz tuning range, 6dBm output power, and competitive phase noise in 65nm bulk CMOS
We demonstrate, using a foundry-based 65nm bulk technology, mmWave CMOS VCOs in the range of 38GHz and 77GHz with highest reported continuous tuning range (14%–25%), competitive phase noise (−88dBc/Hz at 1MHz offset at 77GHz), and high Pout (6dBm at 77GHz) needed to readily integrate with CMOS PA and to tolerate PVT variations. The DC power consumption of the 77GHz VCO is ∼190mW and that of the 38GHz VCOs is ∼60mW (∼16mW without buffer) from 1V supply (VDD). Device and design optimizations responsible for the high performance are presented. The impact of temperature and VDD variation (e.g., ∼2.6GHz shift in frequency and >5.3dB variation in Pout at 77GHz) is reported for the first time.
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