{"title":"用于tft - lcd的非对称金属电极","authors":"Yue Wu, Weina Yong, Chia-Yu. Lee, Hang Zhou","doi":"10.1109/CAD-TFT.2018.8608114","DOIUrl":null,"url":null,"abstract":"In this paper, an asymmetric metal electrode with MoTi/Cu/Mo structure was designed. Due to the appropriate anticorrosion behavior, the thin MoTi top layer prevented photoresist peeling off during the whole etch process, resulted a superior etch profile compare to the control group with a Mo/Cu/Mo symmetrical structure.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Asymmetric Metal Electrode for TFT-LCDs\",\"authors\":\"Yue Wu, Weina Yong, Chia-Yu. Lee, Hang Zhou\",\"doi\":\"10.1109/CAD-TFT.2018.8608114\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, an asymmetric metal electrode with MoTi/Cu/Mo structure was designed. Due to the appropriate anticorrosion behavior, the thin MoTi top layer prevented photoresist peeling off during the whole etch process, resulted a superior etch profile compare to the control group with a Mo/Cu/Mo symmetrical structure.\",\"PeriodicalId\":146962,\"journal\":{\"name\":\"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAD-TFT.2018.8608114\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAD-TFT.2018.8608114","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, an asymmetric metal electrode with MoTi/Cu/Mo structure was designed. Due to the appropriate anticorrosion behavior, the thin MoTi top layer prevented photoresist peeling off during the whole etch process, resulted a superior etch profile compare to the control group with a Mo/Cu/Mo symmetrical structure.
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