GaAs MMIC倒装键合的机械强度分析

B. Zhang, V. Murugesan, N. Billstrom, P. Stenquist, Johan Liu
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引用次数: 0

摘要

无线通信和军事电子产品中封装需求的增加导致了在射频和微波应用中使用倒装芯片。为了实现倒装互连的可靠键合,正确了解键合参数和对不同衬底的键合能力是很重要的。本文对比分析了GaAs MMIC(单片微波集成电路)倒装键合在陶瓷基板(以下简称厚膜和薄膜)上的厚/薄膜金属化,以及有机基板上采用各向异性导电膜(ACF)、热压缩(TC)键合方法的不同键合参数。给出了不同衬底下ACF和TC机械可靠性参数设置的优化研究结果
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Analysis of mechanical strength for flip-chip bonding of GaAs MMIC
Increased packaging demands in wireless communications, and military electronics has led to the use of flip-chips for RF and microwave applications. For a reliable bonding of flip-chip interconnection, proper knowledge of bonding parameters and bonding ability to different substrates is important. This paper depicts a comparative analysis of flip-chip bonding of GaAs MMIC (monolithic microwave integrated circuit) to thick/thin film metallization on ceramic substrates (hereinafter thick-film and thin-film), and organic substrates using anisotropic conductive film (ACF), thermo-compression (TC) bonding methods with different bonding parameters. The results from the optimization study of the parameter settings for mechanical reliability of ACF and TC with different substrates are presented
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