一种输出电容范围为0 ~ 1 μF的全负载混合补偿电感器

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126398

Yuet Ho Woo, K. Mak, K. Leung

{"title":"一种输出电容范围为0 ~ 1 μF的全负载混合补偿电感器","authors":"Yuet Ho Woo, K. Mak, K. Leung","doi":"10.1109/EDSSC.2017.8126398","DOIUrl":null,"url":null,"abstract":"A full-load low-dropout regulator (LDO) based on proposed hybrid compensation structure is proposed. The proposed LDO makes use of an NMOSFET power transistor. The LDO is able to be stabilized for 0 to 1-μF capacitive load. Experimental results prove the LDO stability and fast recovery speed.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A full-load hybrid compensated ldo with output capacitance range of 0 to 1 μF\",\"authors\":\"Yuet Ho Woo, K. Mak, K. Leung\",\"doi\":\"10.1109/EDSSC.2017.8126398\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A full-load low-dropout regulator (LDO) based on proposed hybrid compensation structure is proposed. The proposed LDO makes use of an NMOSFET power transistor. The LDO is able to be stabilized for 0 to 1-μF capacitive load. Experimental results prove the LDO stability and fast recovery speed.\",\"PeriodicalId\":163598,\"journal\":{\"name\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2017.8126398\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

提出了一种基于混合补偿结构的全负载低差调节器(LDO)。所提出的LDO利用NMOSFET功率晶体管。LDO能够在0 ~ 1 μ f的容性负载下稳定工作。实验结果表明，该方法稳定性好，恢复速度快。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

A full-load hybrid compensated ldo with output capacitance range of 0 to 1 μF

A full-load low-dropout regulator (LDO) based on proposed hybrid compensation structure is proposed. The proposed LDO makes use of an NMOSFET power transistor. The LDO is able to be stabilized for 0 to 1-μF capacitive load. Experimental results prove the LDO stability and fast recovery speed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

自引率

0.00%

发文量