基本应变物理

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI:10.1109/RTP.2008.4690530

S. T. Chang, C. Liu

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引用次数: 1

摘要

•解释了CMOS器件背后的基本应变物理原理，并介绍了对行业具有重要技术意义的未来案例。•应变工程在纳米级mosfet方面提供了非常大的改进，并且可扩展到Si CMOS路线图的末端。•应变与Ge等新型通道材料相结合，前景光明，可以增强CMOS技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Basic strain physics

•The basic strain physics behind the CMOS device is explained and future cases of technological importance to the industry are introduced. •Strain Engineering offers very large improvements in nanoscale MOSFETs and is scalable to the end of the Si CMOS roadmap. •Strain combined with new channel material such as Ge has a bright future and can enhance CMOS technology.

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2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors

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