用于有效生长薄铜膜的溅射沉积的旋转衬底支架

Suchat Suwannatus, U. Pakdee
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引用次数: 0

摘要

自制溅射工艺是由一组研究人员设计的。采用标称纯度为99.9%的铜块作为阴极靶材。在真空室中,基压为10-2 mbar,氩气(Ar)作用下,采用直流溅射(dc - sp溅射)技术在玻片上制备了铜薄膜。研究了阴极靶到支架的涂覆距离为4、7和10 cm对Cu薄膜形貌和结晶度的影响。该系统是为了提高涂层薄膜的性能而设计开发的。为了薄膜的有效生长,使用了旋转支架作为支撑功能。支架以30转/分钟的恒定角速度旋转。采用扫描电子显微镜(SEM)、原子力显微镜(AFM)和x射线衍射仪(XRD)对样品进行了表征。实验数据表明,基底支架的旋转作用提高了铜薄膜的表面粗糙度和结晶度。
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The rotating substrate holder of sputtering deposition for effective growth of thin copper films
The homemade sputtering process was devised by a team of researchers. The copper bulk with nominal purity of 99.9% was used as a cathode target. Thin copper films were fabricated on glass slides by direct current sputtering (DC-sputtering) in vacuum chamber with base pressure of typically 10-2 mbar under argon gas (Ar). The effects of coated distances from cathode target to holder as 4, 7 and 10 cm on the morphology and crystallinity of thin Cu films were investigated. The system was designed and developed to improve the performance of coating thin film. A rotating holder was used as a supported function for the effective growth of the films. The holder was rotated with a constant angular speed of 30 rpm. The samples were examined with scanning electron microscope (SEM), atomic force microscope (AFM) and X-ray diffractometer (XRD). The experimental data revealed that the surface roughness and the crystallinity of thin copper films were improved by rotating function of a substrate holder.
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