F. Besahraoui, M. Bouslama, M. Ghafour, Z. Lounis, K. Hamaida
{"title":"光致发光光谱(PLS)表征自组装InAs/InP(001)量子点中横向耦合现象的证据","authors":"F. Besahraoui, M. Bouslama, M. Ghafour, Z. Lounis, K. Hamaida","doi":"10.1109/NAWDMPV.2014.6997602","DOIUrl":null,"url":null,"abstract":"We have characterized with photoluminescence spectroscopy (PLS) the optoelectronic properties of self-assembled InAs quantum islands (QIs) grown on InP(001) substrate. InAs/InP(001) QIs are grown by Molecular Beam Epitaxy (MBE) method in optimized conditions of temperature and gas pressure. From Polarized Photoluminescence (PPL) measurements, we have deduced that InAs quantum islands have an isotropic quantum dots (QDs) shape. Through the excitation density PL measurements, we have checked the origin of the PL peaks. The observed PL peaks are related to a ground states of two families of InAs/InP(001) quantum dots. Through the study of the excitation density - PL spectra, we have evidenced the presence of a lateral coupling phenomenon between the two families of InAs/InP(001) quantum dots. In this case, the ground states are infected by this phenomenon which is considered, in this situation, a degradation source of the optoelectronic devices.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evidence of lateral coupling phenomenon in self-assembled InAs/InP(001) quantum dots characterized by photoluminescence spectroscopy (PLS)\",\"authors\":\"F. Besahraoui, M. Bouslama, M. Ghafour, Z. Lounis, K. Hamaida\",\"doi\":\"10.1109/NAWDMPV.2014.6997602\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have characterized with photoluminescence spectroscopy (PLS) the optoelectronic properties of self-assembled InAs quantum islands (QIs) grown on InP(001) substrate. InAs/InP(001) QIs are grown by Molecular Beam Epitaxy (MBE) method in optimized conditions of temperature and gas pressure. From Polarized Photoluminescence (PPL) measurements, we have deduced that InAs quantum islands have an isotropic quantum dots (QDs) shape. Through the excitation density PL measurements, we have checked the origin of the PL peaks. The observed PL peaks are related to a ground states of two families of InAs/InP(001) quantum dots. Through the study of the excitation density - PL spectra, we have evidenced the presence of a lateral coupling phenomenon between the two families of InAs/InP(001) quantum dots. In this case, the ground states are infected by this phenomenon which is considered, in this situation, a degradation source of the optoelectronic devices.\",\"PeriodicalId\":149945,\"journal\":{\"name\":\"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NAWDMPV.2014.6997602\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAWDMPV.2014.6997602","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evidence of lateral coupling phenomenon in self-assembled InAs/InP(001) quantum dots characterized by photoluminescence spectroscopy (PLS)
We have characterized with photoluminescence spectroscopy (PLS) the optoelectronic properties of self-assembled InAs quantum islands (QIs) grown on InP(001) substrate. InAs/InP(001) QIs are grown by Molecular Beam Epitaxy (MBE) method in optimized conditions of temperature and gas pressure. From Polarized Photoluminescence (PPL) measurements, we have deduced that InAs quantum islands have an isotropic quantum dots (QDs) shape. Through the excitation density PL measurements, we have checked the origin of the PL peaks. The observed PL peaks are related to a ground states of two families of InAs/InP(001) quantum dots. Through the study of the excitation density - PL spectra, we have evidenced the presence of a lateral coupling phenomenon between the two families of InAs/InP(001) quantum dots. In this case, the ground states are infected by this phenomenon which is considered, in this situation, a degradation source of the optoelectronic devices.
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