{"title":"Pt/TiO2−x - TiO2/Pt忆阻体系中I-V曲线的第一性原理dft模拟的迟滞证据","authors":"M. Chakraverty, H. Kittur","doi":"10.1109/ICDCSYST.2012.6188749","DOIUrl":null,"url":null,"abstract":"The memristor is an electrical circuit element that is similar to a resistor but has the potential to maintain state between turning power on and off. These memristors are about half the size of the transistors found in current flash storage technology, allowing capacity of these devices to double. This paper discusses the basics of memristors, which is an electrical circuit element, and presents the first principle simulation results of Pt/TiO2-x - TiO2/Pt system where the central region has a boundary separating TiO2-x and TiO2 regions. This barrier is progressively shifted towards the TiO2-x region with applied bias to gradually increase the thickness of TiO2 region. A comparison of the electrical characteristics of the device when the TiO2 region is extended towards TiO2-x region is also presented. The basis of memristive behavior, the nonlinear hysteresis curve of memristor, has been obtained based upon the simulation results.","PeriodicalId":356188,"journal":{"name":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Evidence of hysteresis from first principle dft simulations of I–V curves in Pt/TiO2−x - TiO2/Pt memristive systems\",\"authors\":\"M. Chakraverty, H. Kittur\",\"doi\":\"10.1109/ICDCSYST.2012.6188749\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The memristor is an electrical circuit element that is similar to a resistor but has the potential to maintain state between turning power on and off. These memristors are about half the size of the transistors found in current flash storage technology, allowing capacity of these devices to double. This paper discusses the basics of memristors, which is an electrical circuit element, and presents the first principle simulation results of Pt/TiO2-x - TiO2/Pt system where the central region has a boundary separating TiO2-x and TiO2 regions. This barrier is progressively shifted towards the TiO2-x region with applied bias to gradually increase the thickness of TiO2 region. A comparison of the electrical characteristics of the device when the TiO2 region is extended towards TiO2-x region is also presented. The basis of memristive behavior, the nonlinear hysteresis curve of memristor, has been obtained based upon the simulation results.\",\"PeriodicalId\":356188,\"journal\":{\"name\":\"2012 International Conference on Devices, Circuits and Systems (ICDCS)\",\"volume\":\"109 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Devices, Circuits and Systems (ICDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICDCSYST.2012.6188749\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2012.6188749","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evidence of hysteresis from first principle dft simulations of I–V curves in Pt/TiO2−x - TiO2/Pt memristive systems
The memristor is an electrical circuit element that is similar to a resistor but has the potential to maintain state between turning power on and off. These memristors are about half the size of the transistors found in current flash storage technology, allowing capacity of these devices to double. This paper discusses the basics of memristors, which is an electrical circuit element, and presents the first principle simulation results of Pt/TiO2-x - TiO2/Pt system where the central region has a boundary separating TiO2-x and TiO2 regions. This barrier is progressively shifted towards the TiO2-x region with applied bias to gradually increase the thickness of TiO2 region. A comparison of the electrical characteristics of the device when the TiO2 region is extended towards TiO2-x region is also presented. The basis of memristive behavior, the nonlinear hysteresis curve of memristor, has been obtained based upon the simulation results.
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