N. Cartiglia, D. Dorfan, D. Pitzl, J. Rahn, W. Rowe, H. Sadrozinski, E. Spencer, M. Wilde, M. Turala, W. Dąbrowski
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Radiation hardness measurements on bipolar test structures and an amplifier-comparator circuit
The authors present radiation hardness measurements of both small-scale bipolar test structures and full amplifier-comparator circuits built in the Tektronix SHPi process. BJTs (bipolar junction transistors (npm of various sizes and a lateral pnp), JFETs (junction field effect transistors), diodes, and resistors have been irradiated to /sup 60/Co doses of up to 5 Mrad and to fluences of up to 1.1*10/sup 14/ cm/sup -2/ of 650 MeV protons. Radiation effects on transistor noise and current gain, the value of the pinch-off voltage and output resistance of the JFET, leakage of diodes, and resistor values are discussed. A full 64-channel amplifier-comparator circuit was exposed to 3.5 Mrad of gammas, and changes in gain and noise were measured. It is concluded that the Tektronix SHPi process appears to offer sufficient radiation hardness for the design of fast, low-power amplifier circuits for the Superconducting Super Collider.<>
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