{"title":"SOS岛边缘轮廓氧化后","authors":"S. N. Lee, R. Kjar","doi":"10.1109/IRPS.1975.362673","DOIUrl":null,"url":null,"abstract":"A study of silicon and oxide profiles at the edges of silicon islands etched in silicon-on-sapphire (SOS) has shown that, following thermal oxidation of the silicon, a \" V\"- shaped groove forms between the silicon dioxide grown on the island edge and the sapphire substrate. This groove can cause etching and metal coverage anomalies at the island edges resulting in poor circuit yield and reliability.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"SOS Island Edge Profiles Following Oxidation\",\"authors\":\"S. N. Lee, R. Kjar\",\"doi\":\"10.1109/IRPS.1975.362673\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A study of silicon and oxide profiles at the edges of silicon islands etched in silicon-on-sapphire (SOS) has shown that, following thermal oxidation of the silicon, a \\\" V\\\"- shaped groove forms between the silicon dioxide grown on the island edge and the sapphire substrate. This groove can cause etching and metal coverage anomalies at the island edges resulting in poor circuit yield and reliability.\",\"PeriodicalId\":369161,\"journal\":{\"name\":\"13th International Reliability Physics Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1975-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1975.362673\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1975.362673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A study of silicon and oxide profiles at the edges of silicon islands etched in silicon-on-sapphire (SOS) has shown that, following thermal oxidation of the silicon, a " V"- shaped groove forms between the silicon dioxide grown on the island edge and the sapphire substrate. This groove can cause etching and metal coverage anomalies at the island edges resulting in poor circuit yield and reliability.
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