A. Cismaru, A. Muller, F. Comanescu, M. Purica, A. Stefanescu, A. Dinescu, G. Konstantinidis, A. Stavrinidis
{"title":"GaN/Si微加工所得GaN膜的形态分析","authors":"A. Cismaru, A. Muller, F. Comanescu, M. Purica, A. Stefanescu, A. Dinescu, G. Konstantinidis, A. Stavrinidis","doi":"10.1109/IRPS.2013.6532090","DOIUrl":null,"url":null,"abstract":"The morphological analysis is targeted towards a better understanding of the reliability of GaN membranes obtained by micromachining of GaN/Si. These membranes are used as support for devices like FBARs or backside-illuminated UV photodetectors. The deflection analysis is performed on 0.4 μm GaN thin membranes. As result of our investigations, focused on deflection and stress distribution in the membrane, further reducing of membrane thickness, to improve devices' electrical performances, is possible without affecting their reliability.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Morphological analysis of GaN membranes obtained by micromachining of GaN/Si\",\"authors\":\"A. Cismaru, A. Muller, F. Comanescu, M. Purica, A. Stefanescu, A. Dinescu, G. Konstantinidis, A. Stavrinidis\",\"doi\":\"10.1109/IRPS.2013.6532090\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The morphological analysis is targeted towards a better understanding of the reliability of GaN membranes obtained by micromachining of GaN/Si. These membranes are used as support for devices like FBARs or backside-illuminated UV photodetectors. The deflection analysis is performed on 0.4 μm GaN thin membranes. As result of our investigations, focused on deflection and stress distribution in the membrane, further reducing of membrane thickness, to improve devices' electrical performances, is possible without affecting their reliability.\",\"PeriodicalId\":138206,\"journal\":{\"name\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2013.6532090\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6532090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Morphological analysis of GaN membranes obtained by micromachining of GaN/Si
The morphological analysis is targeted towards a better understanding of the reliability of GaN membranes obtained by micromachining of GaN/Si. These membranes are used as support for devices like FBARs or backside-illuminated UV photodetectors. The deflection analysis is performed on 0.4 μm GaN thin membranes. As result of our investigations, focused on deflection and stress distribution in the membrane, further reducing of membrane thickness, to improve devices' electrical performances, is possible without affecting their reliability.
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