{"title":"IBM微处理器中用于长期数据收集的内置BTI监视器","authors":"P. Lu, K. Jenkins","doi":"10.1109/IRPS.2013.6532003","DOIUrl":null,"url":null,"abstract":"A circuit for long-term measurement of bias temperature instability (BTI) degradation is described. It is an entirely on-chip measurement circuit, which reports measurements periodically with a digital output. Implemented on IBM's z196 Enterprise systems, it can be used to monitor long-term degradation under real-use conditions. Over 500 days worth of ring oscillator degradation data from customer systems are presented. The importance of using a reference oscillator to measure performance degradation in the field, where the supply voltage and temperature can vary dynamically, is shown.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"A built-in BTI monitor for long-term data collection in IBM microprocessors\",\"authors\":\"P. Lu, K. Jenkins\",\"doi\":\"10.1109/IRPS.2013.6532003\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A circuit for long-term measurement of bias temperature instability (BTI) degradation is described. It is an entirely on-chip measurement circuit, which reports measurements periodically with a digital output. Implemented on IBM's z196 Enterprise systems, it can be used to monitor long-term degradation under real-use conditions. Over 500 days worth of ring oscillator degradation data from customer systems are presented. The importance of using a reference oscillator to measure performance degradation in the field, where the supply voltage and temperature can vary dynamically, is shown.\",\"PeriodicalId\":138206,\"journal\":{\"name\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2013.6532003\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6532003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A built-in BTI monitor for long-term data collection in IBM microprocessors
A circuit for long-term measurement of bias temperature instability (BTI) degradation is described. It is an entirely on-chip measurement circuit, which reports measurements periodically with a digital output. Implemented on IBM's z196 Enterprise systems, it can be used to monitor long-term degradation under real-use conditions. Over 500 days worth of ring oscillator degradation data from customer systems are presented. The importance of using a reference oscillator to measure performance degradation in the field, where the supply voltage and temperature can vary dynamically, is shown.