{"title":"0.13ìm CMOS高动态范围低噪声高增益跨阻放大器","authors":"Guoyi Yu, Xuecheng Zou, Le Zhang, Qiming Zou, Meijun Zheng, Jianfu Zhong","doi":"10.1109/RFIT.2012.6401606","DOIUrl":null,"url":null,"abstract":"This paper designed a low-noise high-gain tran simpedance amplifier with high dynamic range. The input stage of TIA uses an individual power supply to accommodate the level of the photodiode(PD). Then the signal is transmitted to the subsequent circuit by a level shifting circuit. The TIA adopts DCrestore to stabilize work points, and uses a MOS working in the linear region to reduce the effective input signal to realize high dynamic range. Key noise components are optimized to reduce the input referred current noise. This TIA was validated in 0.13 urn CMOS. The simulation results show the -3dB bandwidth is 1.8GHz, the maximum gain is 82.27dB Ω, the input referred noise is 125nA, and the measure current ranges 5uA ~2mA.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"182 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A low-noise high-gain transimpedance amplifier with high dynamic range in 0.13ìm CMOS\",\"authors\":\"Guoyi Yu, Xuecheng Zou, Le Zhang, Qiming Zou, Meijun Zheng, Jianfu Zhong\",\"doi\":\"10.1109/RFIT.2012.6401606\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper designed a low-noise high-gain tran simpedance amplifier with high dynamic range. The input stage of TIA uses an individual power supply to accommodate the level of the photodiode(PD). Then the signal is transmitted to the subsequent circuit by a level shifting circuit. The TIA adopts DCrestore to stabilize work points, and uses a MOS working in the linear region to reduce the effective input signal to realize high dynamic range. Key noise components are optimized to reduce the input referred current noise. This TIA was validated in 0.13 urn CMOS. The simulation results show the -3dB bandwidth is 1.8GHz, the maximum gain is 82.27dB Ω, the input referred noise is 125nA, and the measure current ranges 5uA ~2mA.\",\"PeriodicalId\":187550,\"journal\":{\"name\":\"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"182 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2012.6401606\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2012.6401606","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low-noise high-gain transimpedance amplifier with high dynamic range in 0.13ìm CMOS
This paper designed a low-noise high-gain tran simpedance amplifier with high dynamic range. The input stage of TIA uses an individual power supply to accommodate the level of the photodiode(PD). Then the signal is transmitted to the subsequent circuit by a level shifting circuit. The TIA adopts DCrestore to stabilize work points, and uses a MOS working in the linear region to reduce the effective input signal to realize high dynamic range. Key noise components are optimized to reduce the input referred current noise. This TIA was validated in 0.13 urn CMOS. The simulation results show the -3dB bandwidth is 1.8GHz, the maximum gain is 82.27dB Ω, the input referred noise is 125nA, and the measure current ranges 5uA ~2mA.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
