利用线性阵列的聚SiGe非冷却微辐射热计进行热红外探测

Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442) Pub Date : 1900-01-01 DOI:10.1109/ICM.2003.238498

P. de Moor, Y. Creten, C. Goessens, B. Grietens, V. Leonov, J. Vermeiren, C. van Hoof

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引用次数: 7

摘要

本文讨论了将200/spl倍/1和14/spl倍/14小尺寸非冷却微热计阵列的SiGe技术从IMEC转移到xenic，使多SiGe阵列应用于非接触式温度测量、红外光谱、工艺过程监控、质量控制等方面。该阵列表现出优异的均匀性，约100%的像素产率，100%的可操作性，在读出电平时的NETD约为100 mK。这些优点与密封零级微封装的可能性相结合，使SiGe技术成为低成本生产红外阵列的合适技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Thermal infrared detection using linear arrays of poly SiGe uncooled microbolometers

In this paper, we discuss the SiGe technology for uncooled microbolometer arrays of small format, ie 200/spl times/1 and 14/spl times/14, is transferred from IMEC to XenICs allowing of the poly-SiGe arrays for application in non-contact temperature measurements, infrared spectroscopy, technological process monitoring, quality control, etc. The arrays demonstrate an exceptional uniformity, about 100% pixel yield, 100% operability, and a NETD of about 100 mK at a readout level. These advantages combined with a possibility of hermetic zero-level micropacking make the SiGe technology a proper one for the low-cost production of infrared arrays.

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Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)

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