采用定制片上电感的93.9-105.6 GHz放大器

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126411

G. Su, Li-heng Lou, Lingling Sun, Jun Liu, J. Wen, Xiangyu Lv

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引用次数: 0

摘要

本文设计了一种五级93.9 GHz-105.6 GHz共源CMOS放大器。定制的片上电感器和传输线(TL)设计用于匹配网络。该放大器采用65nm块体CMOS工艺制造，在100ghz和11.7GHz时的峰值增益为9db，在93.9 GHz至105.6 GHz的带宽范围内，在1.2 V电压下的总功耗为49.2 mW。该放大器的面积为0.5mm2，包括焊盘。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 93.9–105.6 GHz amplifier using customized on-chip inductor

A five-stage 93.9 GHz-105.6 GHz common-source CMOS amplifier is presented in this paper. The customized on-chip inductor and transmission line (TL) are designed for matching networks. Fabricated in a 65nm bulk CMOS process, this amplifier achieves a peak gain of 9 dB at 100 GHz and 11.7GHz 3-dB bandwidth range from 93.9 GHz to 105.6 GHz, consuming total power of 49.2 mW under 1.2 V voltage supply. The area of this amplifier is 0.5mm2 including pads.

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2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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