Effect of oxygen pressure on the semiconductor properties of FTO thin films

In this paper, the Optical and Semiconductor properties of epitaxial thin films of Fe2−xTixO3-δ, deposited on SrTiO3 (001) by pulsed laser deposition (PLD) are studied. We use Perlin Elmer 9500 spechtrophotometer in order to measure the optical transmission and reflection. The prepared films using oxygen pressure PO2 above 3 ∗ 10⁻⁷ Torr, presents a R(3) symmetry structure. The prepared samples present a deficiency δ = 0.35. The optical properties show a very important dependence with the oxygen cation stoichiometry. These last properties, which are dominated by the oxygen deficiency obtained during the growth of thin films, show a semiconductor behavior where the conductivity increase more with S than by the atomic ordering of titanium.