IGBT模块中键合导线寿命估算的有限元计算与解析计算的比较

C. Hager, A. Stuck, Y. Tronel, R. Zehringer, W. Fichtner
{"title":"IGBT模块中键合导线寿命估算的有限元计算与解析计算的比较","authors":"C. Hager, A. Stuck, Y. Tronel, R. Zehringer, W. Fichtner","doi":"10.1109/ISPSD.2000.856828","DOIUrl":null,"url":null,"abstract":"Coffin-Manson fatigue law based lifetime estimations of aluminum bond wires in IGBT modules under field conditions were performed. The models were calibrated with fatigue data obtained from accelerated lifetime tests and plastic strain computations corresponding to test conditions. The calibrated laws were then used to predict the bond wire lifetime under field conditions. To evaluate the influence of the plastic strain calculations, finite-element and analytical computations were performed and the resulting lifetimes compared.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Comparison between finite-element and analytical calculations for the lifetime estimation of bond wires in IGBT modules\",\"authors\":\"C. Hager, A. Stuck, Y. Tronel, R. Zehringer, W. Fichtner\",\"doi\":\"10.1109/ISPSD.2000.856828\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Coffin-Manson fatigue law based lifetime estimations of aluminum bond wires in IGBT modules under field conditions were performed. The models were calibrated with fatigue data obtained from accelerated lifetime tests and plastic strain computations corresponding to test conditions. The calibrated laws were then used to predict the bond wire lifetime under field conditions. To evaluate the influence of the plastic strain calculations, finite-element and analytical computations were performed and the resulting lifetimes compared.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856828\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856828","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

摘要

基于Coffin-Manson疲劳定律对IGBT模块中铝结合线进行了现场寿命估计。利用加速寿命试验获得的疲劳数据和相应试验条件下的塑性应变计算对模型进行了校准。校正后的规律用于预测现场条件下的焊线寿命。为了评估塑性应变计算的影响,进行了有限元和解析计算,并比较了计算结果的寿命。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Comparison between finite-element and analytical calculations for the lifetime estimation of bond wires in IGBT modules
Coffin-Manson fatigue law based lifetime estimations of aluminum bond wires in IGBT modules under field conditions were performed. The models were calibrated with fatigue data obtained from accelerated lifetime tests and plastic strain computations corresponding to test conditions. The calibrated laws were then used to predict the bond wire lifetime under field conditions. To evaluate the influence of the plastic strain calculations, finite-element and analytical computations were performed and the resulting lifetimes compared.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Complementary LDMOS transistors for a CMOS/BiCMOS process Using "Adaptive resurf" to improve the SOA of LDMOS transistors Evaluation of 600 V/100 A NPT-IGBT with a non-self-align shallow p-well formation techniques A novel free wheeling diode for 1700 V IGBT module Low voltage CMOS compatible power MOSFET for on-chip DC/DC converters
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1