采用45纳米SOI CMOS的20-30 GHz混频器优先接收器

2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2016-05-22 DOI:10.1109/RFIC.2016.7508323

Charley Wilson, B. Floyd

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引用次数: 21

摘要

提出了一种采用45nm SOI CMOS实现的20- 30ghz混频器优先接收器。接收机采用四相无源混频和输入电感，实现阻抗匹配可调，最高可达30ghz。该接收机达到8 db噪声系数，可重构8.9至20.6 db转换增益和2:1阻抗调谐范围。输入1db压缩点范围为-13 ~ -9.3 dBm，功耗为41mw。

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20–30 GHz mixer-first receiver in 45-nm SOI CMOS

A 20-30 GHz mixer-first receiver implemented in 45-nm SOI CMOS is presented. The receiver employs four-phase passive mixing with input inductor to realize tunable impedance matching up to 30 GHz. The receiver achieves an 8-dB noise figure with reconfigurable 8.9 to 20.6-dB conversion gain and 2:1 impedance tuning range. Input 1-dB compression point ranges from -13 to -9.3 dBm and power consumption is 41 mW.

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2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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