在32纳米CMOS中128×128b高速宽和匹配线内容可寻址存储器

2011 Proceedings of the ESSCIRC (ESSCIRC) Pub Date : 2011-10-13 DOI:10.1109/ESSCIRC.2011.6044920

A. Agarwal, S. Hsu, S. Mathew, M. Anders, Himanshu Kaul, F. Sheikh, R. Krishnamurthy

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引用次数: 43

摘要

128入口× 128b内容可寻址存储器(CAM)设计在1.0V, 32nm高k金属栅极CMOS技术下实现145ps的搜索操作。高速16b宽动态与匹配线，结合全静态搜索线和交换XOR CAM单元模拟显示，与优化的高性能传统nor型CAM设计相比，在等搜索延迟为145ps的情况下，搜索能量减少49%，实现1.07fJ/bit/搜索操作。缩放所提出的CAM的电源电压可实现0.3fJ/bit/搜索，0.5V时搜索延迟1.07ns。

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A 128×128b high-speed wide-and match-line content addressable memory in 32nm CMOS

A 128-entry × 128b content addressable memory (CAM) design enables 145ps search operation in 1.0V, 32nm high-k metal-gate CMOS technology. A high-speed 16b wide dynamic AND match-line, combined with a fully static search-line and swapped XOR CAM cell simulations show a 49% reduction of search energy at iso-search delay of 145ps over an optimized high-performance conventional NOR-type CAM design, enabling 1.07fJ/bit/search operation. Scaling the supply voltage of the proposed CAM enables 0.3fJ/bit/search with 1.07ns search delay at 0.5V.

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2011 Proceedings of the ESSCIRC (ESSCIRC)

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