Cori Haws, B. Guha, E. Perez, M. Davanco, J. Song, K. Srinivasan, L. Sapienza
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For instance, direct epitaxial growth requires crystal lattice matching for producing of defect-free films, wafer bonding requires considerable and costly process development for high bond strength and yield. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes containing InAs quantum dots and which have dimensions up to about 260 μm x 80 μm onto a gold-coated silicon substrate. We show that the presence of a back reflector combined with the etching of micropillars significantly increases the extraction efficiency of quantum light from a single quantum dot line, reaching photon fluxes exceeding 8 105 photons per second. This flux is four times higher than the highest count rates measured from emitters outside the pillars on the same chip. Given its versatility and ease of processing, this technique provides a path to realising hybrid quantum nanopho- tonic devices that combine virtually any material in which free-standing membranes can be made onto any host substrate, without specific compatibility issues and/or requirements.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters\",\"authors\":\"Cori Haws, B. Guha, E. Perez, M. Davanco, J. Song, K. Srinivasan, L. 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引用次数: 4
摘要
结合不同材料的能力使得在单一材料系统中无法找到或利用的互补特性和设备工程相结合。在量子纳米光子学中,人们可能希望通过结合III-V半导体中有效的经典和量子光发射,硅基材料中可实现的低损耗光传播,铌酸锂的快速电光特性,以及用于局部电场应用或发射体电注入的宽带反射器和/或埋地金属触点来增加设备功能。然而,在单一晶圆上组合不同的材料是具有挑战性的,并且可能导致低再现性和/或低产量。例如,直接外延生长需要晶格匹配以生产无缺陷的薄膜,晶圆键合需要相当大且昂贵的工艺开发以获得高键合强度和良率。我们提出了一种转移印刷技术,该技术基于去除独立膜阵列并使用热释放胶带辅助工艺将其沉积到宿主材料上。这种方法是通用的,因为它对传输和宿主材料的限制有限。特别是,我们将包含InAs量子点的190 nm厚的GaAs膜转移到镀金硅衬底上,其尺寸约为260 μm x 80 μm。我们表明,背反射镜的存在与微柱的蚀刻相结合,显着提高了从单个量子点线提取量子光的效率,达到超过8105光子每秒的光子通量。该通量比同一芯片上柱外发射器测量到的最高计数率高4倍。鉴于其通用性和易于处理,该技术为实现混合量子纳米补强器件提供了一条途径,该器件几乎结合了任何材料,其中独立膜可以在任何宿主基底上制造,没有特定的兼容性问题和/或要求。
Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters
The ability to combine different materials enables a combination of complementary properties and device engineering that cannot be found or exploited within a single material system. In quantum nanophotonics, one might want to increase device functionality by, for instance, combining efficient classical and quantum light emission available in III-V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate, and broad-band reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. However, combining different materials on a single wafer is challenging and may result in low reproducibility and/or low yield. For instance, direct epitaxial growth requires crystal lattice matching for producing of defect-free films, wafer bonding requires considerable and costly process development for high bond strength and yield. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes containing InAs quantum dots and which have dimensions up to about 260 μm x 80 μm onto a gold-coated silicon substrate. We show that the presence of a back reflector combined with the etching of micropillars significantly increases the extraction efficiency of quantum light from a single quantum dot line, reaching photon fluxes exceeding 8 105 photons per second. This flux is four times higher than the highest count rates measured from emitters outside the pillars on the same chip. Given its versatility and ease of processing, this technique provides a path to realising hybrid quantum nanopho- tonic devices that combine virtually any material in which free-standing membranes can be made onto any host substrate, without specific compatibility issues and/or requirements.