{"title":"GaAs功率MESFET的全面表征和准确的负载-拉力轮廓预测","authors":"M. Lajugie, F. Grossier, A. Silbermann, Y. Bender","doi":"10.1109/MWSYM.1986.1132186","DOIUrl":null,"url":null,"abstract":"A novel large-signal model implemented on the nonlinear time-domain program CIRCEC leads to accurate prediction of all the GaAs MESFET characteristics, needed for the design of a power amplifier. The good agreement between measured and modeled load-pull contours validates the chosen trends.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Full Characterization of GaAs Power MESFET and Accurate Load-Pull Contours Prediction\",\"authors\":\"M. Lajugie, F. Grossier, A. Silbermann, Y. Bender\",\"doi\":\"10.1109/MWSYM.1986.1132186\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel large-signal model implemented on the nonlinear time-domain program CIRCEC leads to accurate prediction of all the GaAs MESFET characteristics, needed for the design of a power amplifier. The good agreement between measured and modeled load-pull contours validates the chosen trends.\",\"PeriodicalId\":109161,\"journal\":{\"name\":\"1986 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"111 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1986.1132186\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1986.1132186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Full Characterization of GaAs Power MESFET and Accurate Load-Pull Contours Prediction
A novel large-signal model implemented on the nonlinear time-domain program CIRCEC leads to accurate prediction of all the GaAs MESFET characteristics, needed for the design of a power amplifier. The good agreement between measured and modeled load-pull contours validates the chosen trends.