{"title":"一种基于米勒效应的高抗干扰电流传感器","authors":"O. Aiello, F. Fiori","doi":"10.1109/APEMC.2012.6238001","DOIUrl":null,"url":null,"abstract":"This paper deals with the susceptibility to electromagnetic interference (EMI) of circuits used in smart power integrated circuits to sense the current of power transistors. The susceptibility of a conventional current sensor based on the mirroring principle is first investigated. Then a new circuit that avoids the electrical connection of the current sensor to the power transistor drain terminal is proposed. The susceptibility of the above mentioned current sensors is discussed and evaluated by means of time-domain computer simulations.","PeriodicalId":300639,"journal":{"name":"2012 Asia-Pacific Symposium on Electromagnetic Compatibility","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new current sensor based on the Miller effect highly immune to EMI\",\"authors\":\"O. Aiello, F. Fiori\",\"doi\":\"10.1109/APEMC.2012.6238001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper deals with the susceptibility to electromagnetic interference (EMI) of circuits used in smart power integrated circuits to sense the current of power transistors. The susceptibility of a conventional current sensor based on the mirroring principle is first investigated. Then a new circuit that avoids the electrical connection of the current sensor to the power transistor drain terminal is proposed. The susceptibility of the above mentioned current sensors is discussed and evaluated by means of time-domain computer simulations.\",\"PeriodicalId\":300639,\"journal\":{\"name\":\"2012 Asia-Pacific Symposium on Electromagnetic Compatibility\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Asia-Pacific Symposium on Electromagnetic Compatibility\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEMC.2012.6238001\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Asia-Pacific Symposium on Electromagnetic Compatibility","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEMC.2012.6238001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new current sensor based on the Miller effect highly immune to EMI
This paper deals with the susceptibility to electromagnetic interference (EMI) of circuits used in smart power integrated circuits to sense the current of power transistors. The susceptibility of a conventional current sensor based on the mirroring principle is first investigated. Then a new circuit that avoids the electrical connection of the current sensor to the power transistor drain terminal is proposed. The susceptibility of the above mentioned current sensors is discussed and evaluated by means of time-domain computer simulations.
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