三维片上网络的tsv - tsv感应耦合感知编码方案

Ashkan Eghbal, Pooria M. Yaghini, Siavash S. Yazdi, N. Bagherzadeh
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引用次数: 11

摘要

未来的多核系统需要可靠的三维片上网络(3D NoC)。通过硅通孔(TSV)是3D NoC的重要组成部分,可支持更好的性能和更低的功耗。感应式TSV耦合对信号完整性和传输延迟有很大的破坏性影响。本文从工艺流程、TSV长度、TSV半径三个方面对TSV电感耦合进行了分析。针对不同的TSV结构,给出了电感耦合电压的分类。设计了一种新的编码技术,通过调整电流流型来减轻电感耦合效应。对4×8 TSV矩阵的仿真显示,耦合电压降低23%,信息冗余12.5%。
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TSV-to-TSV inductive coupling-aware coding scheme for 3D Network-on-Chip
A reliable Three Dimensional Network-on-Chip (3D NoC) is required for future many-core systems. Through-silicon Via (TSV) is the prominent component of 3D NoC to support better performance and lower power consumption. Inductive TSV coupling has large disruptive effects on Signal Integrity (SI) and transmission delay. In this paper, TSV inductive coupling is analyzed based on technology process, TSV length, and TSV radius for a range of frequencies. A classification of inductive coupling voltage is presented for different TSV configurations. A novel coding technique is devised to mitigate the inductive coupling effects by adjusting the current flow pattern. Simulations for a 4×8 TSV matrix show 23% coupled voltage mitigation, imposing 12.5% information redundancy.
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