用于GSM手持电话的单片RF-CMOS前端LSI

1999 Digest of Technical Papers. International Conference on Consumer Electronics (Cat. No.99CH36277) Pub Date : 1999-06-22 DOI:10.1109/ICCE.1999.785284

Y. Miyahara, S. Kawaguchi, S. Shimizu, N. Itoh, K. Kato

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引用次数: 0

摘要

介绍了一种900mhz CMOS手持电话LSI。介绍了三种特殊的RF-CMOS电路技术，即带螺旋电感和可变电容二极管的900mhz完全集成压控振荡器、新型中频本频电路和有效的图像抑制系统。

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A single chip RF-CMOS front end LSI for GSM handy phone

A 900 MHz CMOS handy phone LSI is described. Three special RF-CMOS circuit technologies, fully integrated 900 MHz VCO with spiral inductor and varicap diode, new IF local frequency circuit, and effective image rejection system, are introduced.

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1999 Digest of Technical Papers. International Conference on Consumer Electronics (Cat. No.99CH36277)

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