{"title":"相同EOT条件下栅极介质带参数对弹道性能的影响","authors":"M. N. Alam, M. Islam, Md.R. Islam","doi":"10.1109/ICECE.2014.7026887","DOIUrl":null,"url":null,"abstract":"Different high-k dielectrics have been supposed to provide same device performance if their physical thickness are not equal but equivalent, called “Equivalent oxide thickness” (EOT). For ultra thin body (UTB) devices like XOI, despite of EOT, conduction band offset (ΔE<sub>C</sub>) at gate oxide-channel interface dominates the ballistic performance. In case of In<sub>0.3</sub>Ga<sub>0.7</sub>Sb XOI nFET using Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> with 0.5 nm EOT, we show the threshold voltage decreases and the subthreshold slope (SS) increases with increase in ΔE<sub>C</sub>.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of band parameter of gate dielectrics on the ballistic performance at same EOT\",\"authors\":\"M. N. Alam, M. Islam, Md.R. Islam\",\"doi\":\"10.1109/ICECE.2014.7026887\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Different high-k dielectrics have been supposed to provide same device performance if their physical thickness are not equal but equivalent, called “Equivalent oxide thickness” (EOT). For ultra thin body (UTB) devices like XOI, despite of EOT, conduction band offset (ΔE<sub>C</sub>) at gate oxide-channel interface dominates the ballistic performance. In case of In<sub>0.3</sub>Ga<sub>0.7</sub>Sb XOI nFET using Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> with 0.5 nm EOT, we show the threshold voltage decreases and the subthreshold slope (SS) increases with increase in ΔE<sub>C</sub>.\",\"PeriodicalId\":335492,\"journal\":{\"name\":\"8th International Conference on Electrical and Computer Engineering\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Conference on Electrical and Computer Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECE.2014.7026887\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Conference on Electrical and Computer Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECE.2014.7026887","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of band parameter of gate dielectrics on the ballistic performance at same EOT
Different high-k dielectrics have been supposed to provide same device performance if their physical thickness are not equal but equivalent, called “Equivalent oxide thickness” (EOT). For ultra thin body (UTB) devices like XOI, despite of EOT, conduction band offset (ΔEC) at gate oxide-channel interface dominates the ballistic performance. In case of In0.3Ga0.7Sb XOI nFET using Al2O3 and HfO2 with 0.5 nm EOT, we show the threshold voltage decreases and the subthreshold slope (SS) increases with increase in ΔEC.
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