G. Dow, K. Tan, N. Ton, J. Abell, M. Siddiqui, B. Gorospe, D. Streit, P. Liu, M. Sholley
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引用次数: 12
摘要
介绍了一种小型化35ghz功率放大器的设计和性能。两级放大器的输出功率为1 W，相关增益为10 dB，功率增加效率为25.1%。该设计基于TRW 0.25 μ m t栅假晶InGaAs高电子迁移率晶体管(HEMT)器件技术。放大器的设计采用1毫米器件驱动2毫米器件。安装在载波上的完整放大器是0.26英寸*0.16英寸*0.02英寸。这里报告的放大器结果代表了35ghz频段单个放大器的最佳功率增益和效率性能
The authors describe the design and performance of a miniaturized 35-GHz power amplifier. The two-stage amplifier has achieved an output power of 1 W with an associated gain of 10 dB and a power-added efficiency of 25.1%. The design is based on a TRW 0.25- mu m T-gate pseudomorphic InGaAs high electron mobility transistor (HEMT) device technology. The amplifier was designed using a 1-mm device driving a 2-mm device. The complete amplifier mounted on a carrier is 0.26 in*0.16 in*0.02 in. The amplifier results reported here represent the best power gain and efficiency performances achieved from a single amplifier at 35 GHz.<>
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