阳极氧化铝模板电沉积制备铜纳米线

C. Chung, C. Yang, M. Liao, S. Li
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引用次数: 0

摘要

本文采用电化学沉积方法,研究了电位和输出模式对多孔阳极氧化铝模板上铜纳米线阵列的影响。以0.2 M CuSO4为基体,采用直流和脉冲两种电位模式制备了铜纳米线阵列。采用扫描电镜和掠入射x射线衍射对铜纳米线阵列的纳米结构、形貌、化学成分和物相进行了表征。结果表明,脉冲方式沉积的铜纳米线阵列在高电位下呈现出较高的纵横比,而在高直流电位下,由于还原反应产生氢,纵横比较短。脉冲沉积的占空比较短,为50%,可以释放产生的氢,形成良好的纳米线。
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Fabrication of copper nanowires by eelectrodeposition uusing anodic aluminum oxide template
In this paper, effects of potential and output mode on copper nanowire arrays via porous anodic aluminum oxide template by electrochemical deposition method have been investigated. The copper nanowire arrays were fabricated using electrochemical deposition in 0.2 M CuSO4 by different potential modes including direct current (DC) and pulse. The nanostructure, morphology, chemical composition and phase of copper nanowire arrays were examined by scanning electron microscopy and grazing incidence X-ray diffraction. The results indicated that the copper nanowire arrays deposited by pulse mode revealed high aspect ratio despite high potential while that at higher DC potential was rather short due to the hydrogen generation in reduction reaction. The short duty cycle of 50% in pulse deposition can release the produced hydrogen for good nanowires formation.
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