On increasing of integration rate of field-effect heterotransistors in the framework of RS-trigger

In this paper we introduce an approach to increase integration rate of field-effect heterotransistors framework RS-trigger. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.