p型Al - N共掺杂ZnO薄膜的电学性能

2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI:10.1109/SMELEC.2006.381113

H. A. Hamid, M. Abdullah, A. Aziz, S. A. Rosli

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引用次数: 1

摘要

采用直流磁控溅射技术在硅衬底上制备了掺杂铝锌薄膜。然后在200℃至500℃的温度范围内，将这些薄膜在氮气-氧气混合气体中退火1小时。Al - N共掺杂ZnO薄膜在所有温度下均可获得p型导电性，空穴浓度高达1.85倍1022 cm-3。

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Electrical Properties of p-Type Al - N Codoped ZnO Thin Films

Aluminium doped zinc thin films were deposited on silicon substrates using direct current (DC) magnetron sputtering in argon atmosphere. These films were then annealed in nitrogen-oxygen mixed gases for 1 hour at temperature range of 200degC to 500degC. P-type conduction of Al - N codoped ZnO thin films were obtained for all temperatures with a high hole concentration of 1.85 times 1022 cm-3.

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2006 IEEE International Conference on Semiconductor Electronics

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