{"title":"短沟道MOSFET的解析传递时间模型","authors":"V. Kasemsuwan","doi":"10.1109/SMELEC.2000.932436","DOIUrl":null,"url":null,"abstract":"An analytical transit time model for short channel MOSFETs is presented. Several second order effects such as short channel and narrow width effects, mobility degradation, parasitic drain and source resistance, velocity saturation and channel length modulation are included in the model. The model shows good agreements with experimental and two dimensional numerical data over a wide range of biasing conditions.","PeriodicalId":359114,"journal":{"name":"ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)","volume":"371 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"An analytical transit time model for short channel MOSFET's\",\"authors\":\"V. Kasemsuwan\",\"doi\":\"10.1109/SMELEC.2000.932436\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analytical transit time model for short channel MOSFETs is presented. Several second order effects such as short channel and narrow width effects, mobility degradation, parasitic drain and source resistance, velocity saturation and channel length modulation are included in the model. The model shows good agreements with experimental and two dimensional numerical data over a wide range of biasing conditions.\",\"PeriodicalId\":359114,\"journal\":{\"name\":\"ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)\",\"volume\":\"371 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-11-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2000.932436\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2000.932436","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An analytical transit time model for short channel MOSFET's
An analytical transit time model for short channel MOSFETs is presented. Several second order effects such as short channel and narrow width effects, mobility degradation, parasitic drain and source resistance, velocity saturation and channel length modulation are included in the model. The model shows good agreements with experimental and two dimensional numerical data over a wide range of biasing conditions.
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