电纳米探测分析的隐形缺陷识别

P. T. Ng, C.Q. Chen, Y. Tam, K. H. Yip, A. Teo, G.H. Ang, Z. Mai, J. Lam
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引用次数: 0

摘要

随着半导体技术的不断缩小,失效分析在故障根源识别方面面临着更加复杂的挑战。传统的故障分析方法不能有效地解决与植入相关的问题。在某些情况下,电气分析和证据可以作为缺陷识别和随后的根本原因理解的替代和更简单的方法。本文采用纳米电探针分析的方法对一个与植入有关的案例进行了分析。通过详细的电分析和准确的数据解释,成功地隔离了缺陷部位和随后的植入步骤
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Invisible Defect Identification by Electrical Nanoprobing Analysis
As the semiconductor technology keeps scaling down, failure analysis faces more complicated challenges in failure root cause identification. Conventional failure analysis may not effective in solving issue which implantation related. In some cases, electrical analysis and evidence can serve as an alternate and easier way for defect identification and subsequent root cause understanding. In this paper, an implantation related case was analyzed by electrical nanoprobing analysis. Defective location and subsequent implantation step was successfully isolated through detail electrical analysis and accurate data interpretation
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