Adla Ismail, L. Saidi, M. Sayadi, Mohamed Benbouzid
{"title":"热老化功率IGBT的高斯过程回归剩余使用寿命预测","authors":"Adla Ismail, L. Saidi, M. Sayadi, Mohamed Benbouzid","doi":"10.1109/IECON.2019.8926710","DOIUrl":null,"url":null,"abstract":"Power electronic converters such as inverters and rectifiers are crucial parts of renewable energy systems. Usually, the power converters are subjected to a high failure frequency rate and lead to power system shut down. In an effort to predict power insulated gate bipolar transistor (IGBTs) device aging, this paper proposes a remaining useful life estimation algorithm for degraded power IGBTs, which are exposed to high amplitude of thermal overstress, through the Gaussian Process regression technique. The benefits of the proposed prognostic method are also illustrated with real device accelerated aging database set under thermal overstress utilizing a DC at the gate.","PeriodicalId":187719,"journal":{"name":"IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Gaussian Process Regression Remaining Useful Lifetime Prediction of Thermally Aged Power IGBT\",\"authors\":\"Adla Ismail, L. Saidi, M. Sayadi, Mohamed Benbouzid\",\"doi\":\"10.1109/IECON.2019.8926710\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Power electronic converters such as inverters and rectifiers are crucial parts of renewable energy systems. Usually, the power converters are subjected to a high failure frequency rate and lead to power system shut down. In an effort to predict power insulated gate bipolar transistor (IGBTs) device aging, this paper proposes a remaining useful life estimation algorithm for degraded power IGBTs, which are exposed to high amplitude of thermal overstress, through the Gaussian Process regression technique. The benefits of the proposed prognostic method are also illustrated with real device accelerated aging database set under thermal overstress utilizing a DC at the gate.\",\"PeriodicalId\":187719,\"journal\":{\"name\":\"IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IECON.2019.8926710\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IECON.2019.8926710","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Gaussian Process Regression Remaining Useful Lifetime Prediction of Thermally Aged Power IGBT
Power electronic converters such as inverters and rectifiers are crucial parts of renewable energy systems. Usually, the power converters are subjected to a high failure frequency rate and lead to power system shut down. In an effort to predict power insulated gate bipolar transistor (IGBTs) device aging, this paper proposes a remaining useful life estimation algorithm for degraded power IGBTs, which are exposed to high amplitude of thermal overstress, through the Gaussian Process regression technique. The benefits of the proposed prognostic method are also illustrated with real device accelerated aging database set under thermal overstress utilizing a DC at the gate.